A. Lauwers

First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts

Geoffrey Pourtois, A. Lauwers, J. A. Kittl et al. · Microelectronic Engineering · 2005 · 33 citations

Natural Sciences, Electrical Engineering, Materials Science +16

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

Karl Opsomer, Davy Deduytsche, Christophe Detavernier et al. · Applied Physics Letters · 2007 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +17

Scalability of Ni FUSI gate processes: phase and Vt control to 30 nm gate lenghts

J. A. Kittl, A. Veloso, A. Lauwers et al. · 2005 · 28 citations

Engineering, Electrical Engineering, Materials Science +16

Improved thermal stability of Ni-silicides on Si:C epitaxial layers

Vladimir Machkaoutsan, S. Mertens, Matthias Bauer et al. · Microelectronic Engineering · 2007 · 27 citations

Engineering, Materials Engineering, Materials Science +14

Manufacturability Issues for Application of Silicides In 0.25 μm CMOS Process and Beyond

Q. F. Wang, A. Lauwers, Franky Jonckx et al. · MRS Proceedings · 1995 · 22 citations

Engineering, Electrical Engineering, Materials Engineering +14