Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise, Michel Houssa, Geoffrey Pourtois, +2

Nano Research

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen, +18

Non-volatile MemoryResistive RamEngineeringExcellent PerformanceEmerging Memory Technology +15

Electronic properties of hydrogenated silicene and germanene

Michel Houssa, Emilio Scalise, Kiroubanand Sankaran, +3

Applied Physics Letters

Ii-vi SemiconductorEngineeringPhysicsNatural SciencesApplied Physics +10

Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymers

David Beljonne, Geoffrey Pourtois, Carlos Silva, +7

Proceedings of the National Academy of Sciences

Organic Charge-transfer CompoundEngineeringPhotochemistryPolymer ScienceApplied Physics +12

Spin−Orbit Coupling and Intersystem Crossing in Conjugated Polymers:  A Configuration Interaction Description

David Beljonne, Zhigang Shuai, Geoffrey Pourtois, +1

The Journal of Physical Chemistry A

EngineeringExcitation Energy TransferComputational ChemistryChemistryConjugated Oligomers +18

Bandgap opening in oxygen plasma-treated graphene

Amirhasan Nourbakhsh, Mirco Cantoro, Tom Vosch, +7

Nanotechnology

Materials ScienceGraphene NanomeshesGraphene Quantum DotEngineeringPhysics +8

Mechanical and Electronic Properties of Thin‐Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications

Paul Heremans, Ashutosh Tripathi, A. de Jamblinne de Meux, +4

Advanced Materials

EngineeringOrganic ElectronicsMechanical EngineeringSemiconductor MaterialsThin Film Process Technology +21

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D.P. Brunco, Brice De Jaeger, Geert Eneman, +19

Journal of The Electrochemical Society

Materials ScienceDislocation DensitiesElectrical EngineeringSemiconductor TechnologyEngineering +9

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici, +35

Microelectronic Engineering

Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsApplied Physics +5

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

Sergiu Clima, Dirk J. Wouters, Christoph Adelmann, +4

Applied Physics Letters

EngineeringOrthorhombic Hfo2ChemistryFirst Principles CalculationsMultiferroics +16