Gouri Sankar Kar

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 607 citations

Engineering, Electrical Engineering, Materials Science +12

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

Yang Yin Chen, Ludovic Goux, Sergiu Clima et al. · IEEE Transactions on Electron Devices · 2013 · 255 citations

Natural Sciences, Materials Engineering, Materials Science +11

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul et al. · 2020 · 194 citations

Engineering, Electrical Engineering, Materials Science +16

SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories

Kévin Garello, Faisal Mohd-Yasin, Sébastien Couet et al. · 2018 · 186 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

Yang Yin Chen, B. Govoreanu, L. Goux et al. · IEEE Transactions on Electron Devices · 2012 · 185 citations

Engineering, Computer Engineering, Fault-tolerant Computing +10