M.J.H. van Dal - Concepedia

Author

M.J.H. van Dal

Also Known As

M J H van Dal, M. J. H. Dal, M. J. H. Van Dal, M. J. H. van Dal, M.J.H van Dal, M.J.H. VAN DAL, M.J.H. Van Dal, M.J.H. van Dal, M.J.H.van Dal, Mark J. H. Van Dal

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

IMEC Taiwan Semiconductor Manufacturing Company (Taiwan)NXP (Belgium)Eindhoven University of Technology KU Leuven

About

M.J.H. van Dal is an author at IMEC specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	48	2K
2	Applied Physics	26	42	1.6K
3	Medicine	2	2	47
4	Natural Sciences	2	2	258
5	Chemistry	2	2	74

M.J.H. van Dal

Publications

Citations

H-Index

Page 1

	Year	Citations
The Kirkendall effect in multiphase diffusion Aloke Paul, M.J.H. van Dal, A.A. Kodentsov, Acta Materialia EngineeringDiffusion ResistancePhysicsNatural SciencesNumerical Simulation	2003	191
Intrinsic diffusion and Kirkendall effect in Ni–Pd and Fe–Pd solid solutions M.J.H. van Dal, M.C.L.P. Pleumeekers, A.A. Kodentsov, Acta Materialia Materials ScienceKirkendall EffectEngineeringDiffusion ResistanceApplied Physics	2000	108
Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors Ray Duffy, M.J.H. van Dal, Bartek Pawlak, Applied Physics Letters Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringCrystalline Defects	2007	97
Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range N. Stavitski, M.J.H. van Dal, A. Lauwers, IEEE Electron Device Letters EngineeringIntegrated CircuitsSilicon On InsulatorInterconnect (Integrated Circuits)Semiconductor Device	2008	97
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography M.J.H. van Dal, Nadine Collaert, G. Doornbos, EngineeringIntegrated CircuitsInterconnect (Integrated Circuits)Semiconductor DeviceWafer Scale Processing	2007	79
Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates J. A. Kittl, Małgorzata Pawlak, A. Lauwers, IEEE Electron Device Letters Materials ScienceElectrical EngineeringEngineeringPhysicsNanoelectronics	2005	71
Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping M.J.H. van Dal, G. Vellianitis, B. Duriez, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringAspect Ratio TrappingRf SemiconductorNanoelectronics	2014	67
Microstructural Stability of the Kirkendall Plane in Solid-State Diffusion M.J.H. van Dal, Andriy Gusak, Csaba Cserháti, Physical Review Letters EngineeringDiffusion ZoneTransport PhenomenaAnomalous DiffusionBiophysics	2001	67
Silicides and germanides for nano-CMOS applications J. A. Kittl, Karl Opsomer, C. Torregiani, Materials Science and Engineering B Nano-cmos ApplicationsEngineeringNanoelectronicsNanotechnologyApplied Physics	2008	66
Intrinsic diffusion in Ni3Al system Csaba Cserháti, A. Paul, A.A. Kodentsov, Intermetallics EngineeringDiffusion ResistancePhysicsApplied PhysicsIntrinsic Diffusion	2003	66

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