A. Lauwers

Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

A. Lauwers, An Steegen, Muriel de Potter et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 139 citations

Engineering, Electrical Performance, Silicon On Insulator +16

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

T. Chiarella, Liesbeth Witters, A. Mercha et al. · Solid-State Electronics · 2010 · 120 citations

Electrical Engineering, Physical Design (Electronics), Engineering +8

Ni- and Co-based silicides for advanced CMOS applications

J. A. Kittl, A. Lauwers, O. Chamirian et al. · Microelectronic Engineering · 2003 · 114 citations

Engineering, Nanoelectronics, Applied Physics +6

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

N. Stavitski, M.J.H. van Dal, A. Lauwers et al. · IEEE Electron Device Letters · 2008 · 97 citations

Engineering, Integrated Circuits, Silicon On Insulator +17

<i>In situ</i> transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines

V. S. Teodorescu, L. C. Nistor, H. Bender et al. · Journal of Applied Physics · 2001 · 96 citations

Materials Science, Engineering, Monosilicide Layer +12