H. Bender

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 603 citations

Non-volatile Memory, Resistive Ram, Engineering +17

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

Umberto Celano, Ludovic Goux, Attilio Belmonte et al. · Nano Letters · 2014 · 332 citations

Observed Filament, Such Filament, Engineering +19

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 246 citations

Electrical Engineering, Semiconductor Device, Engineering +7

Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy

J. De Boeck, R. Oesterholt, A. Van Esch et al. · Applied Physics Letters · 1996 · 240 citations

Magnetic Properties, Engineering, Annealing Step +18

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Hans Mertens, R. Ritzenthaler, Andriy Hikavyy et al. · 2016 · 192 citations

Engineering, Si Nws, Bulk Si Substrates +16