Bartek Pawlak

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Bartek Pawlak, R. Surdeanu, B. Colombeau et al. · Applied Physics Letters · 2004 · 104 citations

Engineering, Ge Preamorphization, Boron Deactivation +16

Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

Ray Duffy, M.J.H. van Dal, Bartek Pawlak et al. · Applied Physics Letters · 2007 · 97 citations

Materials Science, Electrical Engineering, Epitaxial Growth +14

Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

M.J.H. van Dal, Nadine Collaert, G. Doornbos et al. · 2007 · 79 citations

Engineering, Integrated Circuits, Interconnect (Integrated Circuits) +18

Multi-gate devices for the 32nm technology node and beyond

Nadine Collaert, A. De Keersgieter, Abhisek Dixit et al. · 2007 · 60 citations

Planar Bulk Devices, Electrical Engineering, Engineering +15

Multi-gate devices for the 32nm technology node and beyond

Nadine Collaert, A. De Keersgieter, Abhisek Dixit et al. · Solid-State Electronics · 2008 · 57 citations

Electrical Engineering, Engineering, Vlsi Design +7