Multi-gate devices for the 32nm technology node and beyond

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

Chenming Hu, Jeffrey Bokor, Tsu‐Jae King et al. · IEEE Transactions on Electron Devices · 2000 · 1.6K citations

Engineering, Electrical Engineering, Electronic Materials +13

Analysis of the Parasitic S/D Resistance in Multiple-Gate FETs

Abhisek Dixit, Anil Kottantharayil, Nadine Collaert et al. · IEEE Transactions on Electron Devices · 2005 · 355 citations

Engineering, Electrical Engineering, Electronic Materials +16

FinFET design considerations based on 3-D simulation and analytical modeling

Guangsheng Pei, J. Kedzierski, Phil Oldiges et al. · IEEE Transactions on Electron Devices · 2002 · 296 citations

Engineering, Electrical Engineering, Microelectronics +16

Pi-Gate SOI MOSFET

Jong‐Tae Park, J.-P. Colinge, C.H. Diaz · IEEE Electron Device Letters · 2001 · 256 citations

Engineering, Computer Engineering, Electrical Engineering +16

Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

J. Kavalieros, Barry M. Doyle, Suman Datta et al. · 2006 · 220 citations

Engineering, Electrical Engineering, Materials Science +17