Phil Oldiges

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 939 citations

Engineering, Nanocomputing, Semiconductor Device +17

FinFET design considerations based on 3-D simulation and analytical modeling

Guangsheng Pei, J. Kedzierski, Phil Oldiges et al. · IEEE Transactions on Electron Devices · 2002 · 296 citations

Device Modeling, Electrical Engineering, Physical Design (Electronics) +14

Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

Kenneth P. Rodbell, David F. Heidel, Henry H. K. Tang et al. · IEEE Transactions on Nuclear Science · 2007 · 183 citations

Engineering, Ion Beam Instrumentation, Proton Irradiation +16

Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond

Seong-Dong Kim, Michael Guillorn, Isaac Lauer et al. · 2015 · 140 citations

Engineering, Vlsi Design, Computer Architecture +20

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 139 citations

Engineering, Electron-beam Lithography, Finfet Technology +18