Terence B. Hook

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

Engineering, Electrical Engineering, Microelectronics +15

Power and Technology Scaling into the 5 nm Node with Stacked Nanosheets

Terence B. Hook · Joule · 2017 · 392 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +13

Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond

Seong-Dong Kim, Michael Guillorn, Isaac Lauer et al. · 2015 · 146 citations

Engineering, Electrical Engineering, Microelectronics +16

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

Lateral ion implant straggle and mask proximity effect

Terence B. Hook, J. Brown, P.E. Cottrell et al. · IEEE Transactions on Electron Devices · 2003 · 99 citations

Engineering, Electrical Engineering, Circuit Theory +14