Quantum Tunneling Effects
Quantum Tunneling Effects is a physical phenomenon in semiconductor device scaling whereby electrons penetrate through a classically insurmountable potential barrier due to their wave-like quantum mechanical behavior, leading to leakage currents and reduced gate control in nanoscale transistors.
2.9K
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Citations
8.8K
Authors
1.7K
Institutions
Publications per year
2017–2026
494
Parents
2.9K
Macroscopic quantum tunnelling of magnetization in a single crystal of nanomagnets
F. Lionti, R. Ballou, Dante Gatteschi et al. · Nature · 1996 · 2K citations
E. O. Kane · Journal of Applied Physics · 1961 · 1K citations
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Centre National de la Recherche Scientifique, France
20 publications · 2.7K citations
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École Polytechnique Fédérale de Lausanne, Switzerland
14 publications · 854 citations
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Centre National de la Recherche Scientifique
Paris, France
46 h-index
386 publications
33.6K citations
Massachusetts Institute of Technology
Cambridge, United States
29 h-index
91 publications
8.1K citations
University of California, Santa Barbara
Santa Barbara, United States
27 h-index
101 publications
14.3K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
27 h-index
94 publications
8.3K citations
University of Illinois Urbana-Champaign
Urbana, United States
27 h-index
110 publications
8.2K citations
École Polytechnique Fédérale de Lausanne
Lausanne, Switzerland
25 h-index
97 publications
5.6K citations
University of California, Berkeley
Berkeley, United States
25 h-index
116 publications
16.8K citations
Stony Brook University
Stony Brook, United States
25 h-index
56 publications
3.8K citations
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PRL · 261 publications · 26K citations
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PRB · 244 publications · 13.9K citations
60
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222 publications · 10.3K citations
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133 publications · 8.1K citations
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PRB · 141 publications · 6.6K citations
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