Quantum Tunneling Effects

Quantum Tunneling Effects is a physical phenomenon in semiconductor device scaling whereby electrons penetrate through a classically insurmountable potential barrier due to their wave-like quantum mechanical behavior, leading to leakage currents and reduced gate control in nanoscale transistors.

2.9K

Publications

162K

Citations

8.8K

Authors

1.7K

Institutions

Publications per year

2017–2026

494

Authors

8.8K

  1. WW
    Wolfgang Wernsdorfer

    Centre National de la Recherche Scientifique, France

    20 publications · 2.7K citations

    17

    h-index

  2. AM
    Adrian M. Ionescu

    École Polytechnique Fédérale de Lausanne, Switzerland

    14 publications · 854 citations

    13

    h-index

  3. LE
    L. Eaves

    University of Nottingham, United Kingdom

    12 publications · 335 citations

    12

    h-index

  4. HG
    Hermann Grabert

    University of Freiburg, Germany

    13 publications · 795 citations

    12

    h-index

  5. DA
    D. A. Ritchie

    University of Cambridge, United Kingdom

    11 publications · 405 citations

    11

    h-index

1–5 of 8.8K

Venues

  1. Physical Review Letters

    PRL · 261 publications · 26K citations

    87

    h-index

  2. Physical review. B, Condensed matter

    PRB · 244 publications · 13.9K citations

    60

    h-index

  3. Applied Physics Letters

    222 publications · 10.3K citations

    55

    h-index

  4. IEEE Transactions on Electron Devices

    133 publications · 8.1K citations

    46

    h-index

  5. Physical Review B

    PRB · 141 publications · 6.6K citations

    41

    h-index

1–5