Epitaxial Interfaces

Epitaxial Interfaces is a type of semiconductor interface characterized by the ordered, crystallographically aligned growth of one crystalline material on the surface of another, where the overlying layer replicates the atomic lattice structure of the substrate with minimal defect density and coherent bonding at the boundary.

1.6K

Publications

68.7K

Citations

6K

Authors

1K

Institutions

Publications per year

2017–2026

147

Authors

6K

  1. RT
    R. T. Tung

    AT&T (United States), United States

    17 publications · 1.1K citations

    16

    h-index

  2. NŌ
    N. Ōtsuka

    Purdue University West Lafayette, United States

    13 publications · 679 citations

    13

    h-index

  3. GG
    G. Gewinner

    Laboratoire de Photochimie et d'Ingénierie Macromoléculaire, France

    12 publications · 411 citations

    11

    h-index

  4. HV
    H. von Känel

    ETH Zurich, Switzerland

    10 publications · 367 citations

    10

    h-index

  5. JN
    J. Narayan

    North Carolina State University, United States

    10 publications · 509 citations

    10

    h-index

1–5 of 6K

Venues

  1. Applied Physics Letters

    278 publications · 12.7K citations

    59

    h-index

  2. Journal of Applied Physics

    137 publications · 6.5K citations

    38

    h-index

  3. Physical review. B, Condensed matter

    PRB · 63 publications · 3.4K citations

    35

    h-index

  4. Journal of Crystal Growth

    136 publications · 3.9K citations

    34

    h-index

  5. Surface Science

    79 publications · 2.9K citations

    30

    h-index

1–5