N. Ōtsuka

Gallium arsenide and other compound semiconductors on silicon

S. F. Fang, K. Adomi, Swaminathan P. Iyer et al. · Journal of Applied Physics · 1990 · 584 citations

Engineering, Materials Engineering, Materials Science +17

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

A.C. Warren, J. M. Woodall, J. L. Freeouf et al. · Applied Physics Letters · 1990 · 434 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Material properties of high-quality GaAs epitaxial layers grown on Si substrates

R. Fischer, H. Morkoç̌, D. A. Neumann et al. · Journal of Applied Physics · 1986 · 270 citations

Natural Sciences, Materials Science, Physics +17

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M. R. Melloch, N. Ōtsuka, J. M. Woodall et al. · Applied Physics Letters · 1990 · 244 citations

Engineering, Materials Engineering, Materials Science +16

Graded band gap ohmic contact to <i>p</i>-ZnSe

Y. Fan, Jung Han, Junji Saraie et al. · Applied Physics Letters · 1992 · 208 citations

Engineering, Electrical Engineering, Materials Science +17