J. L. Freeouf - Concepedia

Author

J. L. Freeouf

IBM Research - Thomas J. Watson Research Center

Also Known As

J FREEOUF, J L Freeouf, J. FREEOUF, J. Freeouf, J. L Freeouf, J. L. Freeouf, J.L Freeouf, J.L. Freeouf, John L. Freeouf

124

Publications

6.6K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Pennsylvania State University Interface (United States)City University of New York

About

J. L. Freeouf is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	66	5.4K
2	Applied Physics	38	66	5.4K
3	Natural Sciences	17	20	1.5K
4	Business	1	1	440
5	Management	1	1	440

J. L. Freeouf

Publications

5.8K

Citations

H-Index

Page 1

	Year	Citations
Schottky barriers: An effective work function model J. L. Freeouf, J. M. Woodall Applied Physics Letters EngineeringTask AnalysisProject ManagementSemiconductorsBarrier Height	1981	440
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy A.C. Warren, J. M. Woodall, J. L. Freeouf, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringGaas Buffer LayersEngineering	1990	434
Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry Seung-Gu Lim, Stas Kriventsov, Thomas N. Jackson, Journal of Applied Physics Optical MaterialsEngineeringOptical MetrologyOptoelectronic DevicesChemistry	2002	377
Far-Ultraviolet Reflectance of II-VI Compounds and Correlation with the Penn—Phillips Gap J. L. Freeouf Physical review. B, Solid state Short Wavelength OpticOptical MaterialsEngineeringZinc CompoundsOptical Testing	1973	260
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures M. R. Melloch, N. Ōtsuka, J. M. Woodall, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringGaas Buffer LayersEngineering	1990	244
Ohmic contacts to <i>n</i>-GaAs using graded band gap layers of Ga1−<i>x</i>In<i>x</i>As grown by molecular beam epitaxy J. M. Woodall, J. L. Freeouf, G. D. Pettit, Journal of Vacuum Science and Technology Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsQuantum Materials	1981	195
Photoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and Agl D. E. East̀man, W. D. Grobman, J. L. Freeouf, Physical review. B, Solid state EngineeringPhotoemission DensitiesElectronic State DensitiesChemistryElectronic Excited State	1974	180
Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110) D. E. East̀man, J. L. Freeouf Physical Review Letters EngineeringPhysicsElectron SpectroscopyApplied PhysicsQuantum Materials	1974	173
Measurement of the band offsets between amorphous LaAlO3 and silicon L. F. Edge, Darrell G. Schlom, Scott A. Chambers, Applied Physics Letters Materials ScienceSemiconductorsMolecular-beam DepositionEngineeringOptical Properties	2004	160
Interpretation of the photoelectron spectra of molecularly adsorbed CO T. Gustafsson, E. W. Plummer, D. E. East̀man, Solid State Communications Molecular SpectroscopyPhotochemistryNatural SciencesSpectroscopyPhysical Chemistry	1975	157

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