J. L. Freeouf

Schottky barriers: An effective work function model

J. L. Freeouf, J. M. Woodall · Applied Physics Letters · 1981 · 440 citations

Engineering, Task Analysis, Project Management +19

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

A.C. Warren, J. M. Woodall, J. L. Freeouf et al. · Applied Physics Letters · 1990 · 434 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +15

Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

Seung-Gu Lim, Stas Kriventsov, Thomas N. Jackson et al. · Journal of Applied Physics · 2002 · 377 citations

Optical Materials, Engineering, Optical Metrology +24

Far-Ultraviolet Reflectance of II-VI Compounds and Correlation with the Penn—Phillips Gap

J. L. Freeouf · Physical review. B, Solid state · 1973 · 260 citations

Short Wavelength Optic, Optical Materials, Engineering +23

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M. R. Melloch, N. Ōtsuka, J. M. Woodall et al. · Applied Physics Letters · 1990 · 244 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +12