J. M. Woodall

Schottky barriers: An effective work function model

J. L. Freeouf, J. M. Woodall · Applied Physics Letters · 1981 · 442 citations

Natural Sciences, Materials Science, Physics +17

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

A.C. Warren, J. M. Woodall, J. L. Freeouf et al. · Applied Physics Letters · 1990 · 434 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Macroelectronics: Perspectives on Technology and Applications

Robert H. Reuss, Babu Chalamala, Alina Moussessian et al. · Proceedings of the IEEE · 2005 · 352 citations

Engineering, Electrical Engineering, Materials Science +17

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Eugene A. Fitzgerald, G. P. Watson, R.E. Proano et al. · Journal of Applied Physics · 1989 · 312 citations

Engineering, Materials Engineering, Materials Science +17

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M. R. Melloch, N. Ōtsuka, J. M. Woodall et al. · Applied Physics Letters · 1990 · 244 citations

Engineering, Materials Engineering, Materials Science +16