A.C. Warren

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

A.C. Warren, J. M. Woodall, J. L. Freeouf et al. · Applied Physics Letters · 1990 · 434 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +15

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M. R. Melloch, N. Ōtsuka, J. M. Woodall et al. · Applied Physics Letters · 1990 · 244 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +12

Unpinned (100) GaAs surfaces in air using photochemistry

S. D. Offsey, J. M. Woodall, A.C. Warren et al. · Applied Physics Letters · 1986 · 211 citations · Full text

Semiconductors, Surface Fermi Level, Electronic Devices +14

Quasi One-Dimensional Conduction in Multiple, Parallel Inversion Lines

A.C. Warren, D.A. Antoniadis, Henry I. Smith · Physical Review Letters · 1986 · 139 citations

Electrical Engineering, Engineering, Physics +15

Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers

A.C. Warren, N. Katzenellenbogen, D. Grischkowsky et al. · Applied Physics Letters · 1991 · 134 citations · Full text

Thz Photonics, Terahertz Technology, Optical Materials +20