S. D. Offsey

Unpinned (100) GaAs surfaces in air using photochemistry

S. D. Offsey, J. M. Woodall, A.C. Warren et al. · Applied Physics Letters · 1986 · 211 citations · Full text

Semiconductors, Surface Fermi Level, Electronic Devices +14

Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

S. D. Offsey, W.J. Shcaff, P.J. Tasker et al. · IEEE Photonics Technology Letters · 1990 · 68 citations

Engineering, Laser Applications, Optoelectronic Devices +18

Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

S. D. Offsey, W. J. Schaff, L. F. Lester et al. · IEEE Journal of Quantum Electronics · 1991 · 48 citations

Wide-bandgap Semiconductor, Engineering, High-speed Modulation +16

Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

S. D. Offsey, W. J. Schaff, P.J. Tasker et al. · Applied Physics Letters · 1989 · 38 citations

Photonics, Engineering, Semiconductor Lasers +11

High-speed modulation of strained-layer InGaAs-GaAs-AlGaAs ridge waveguide multiple quantum well lasers

S. D. Offsey, L. F. Lester, W. J. Schaff et al. · Applied Physics Letters · 1991 · 34 citations

Photonics, Engineering, High-speed Modulation +11