S. D. Offsey - Concepedia

Author

S. D. Offsey

Cornell University

Also Known As

S. D. OFFSEY, S. D. Offsey, S.D. Offsey, Stephen D. Offsey

Publications

471

Citations

H-Index

Concepts

All Affiliations

Cornell University

About

S. D. Offsey is an author at Cornell University specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	445
2	Applied Physics	7	7	445
3	Physics	3	3	297
4	Electrical Engineering	2	2	116
5	Electronic Devices	1	1	211

S. D. Offsey

Publications

456

Citations

H-Index

Page 1

	Year	Citations
Unpinned (100) GaAs surfaces in air using photochemistry S. D. Offsey, J. M. Woodall, A.C. Warren, Applied Physics Letters SemiconductorsSurface Fermi LevelElectronic DevicesEngineeringInsulator/gaas Interface	1986	211
Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers S. D. Offsey, W.J. Shcaff, P.J. Tasker, IEEE Photonics Technology Letters EngineeringLaser ApplicationsOptoelectronic DevicesThreshold CurrentsHigh-power Lasers	1990	68
Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation S. D. Offsey, W. J. Schaff, L. F. Lester, IEEE Journal of Quantum Electronics Wide-bandgap SemiconductorEngineeringHigh-speed ModulationLaser ApplicationsLaser Material	1991	48
Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy S. D. Offsey, W. J. Schaff, P.J. Tasker, Applied Physics Letters PhotonicsEngineeringSemiconductor LasersApplied PhysicsLaser Applications	1989	38
High-speed modulation of strained-layer InGaAs-GaAs-AlGaAs ridge waveguide multiple quantum well lasers S. D. Offsey, L. F. Lester, W. J. Schaff, Applied Physics Letters PhotonicsEngineeringHigh-speed ModulationRf SemiconductorMicrowave Modulation Bandwidth	1991	34
Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers L. F. Lester, S. D. Offsey, B. K. Ridley, Applied Physics Letters PhotonicsLayer LasersExperimental Differential GainEngineeringSemiconductor Lasers	1991	28
High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching L. F. Lester, W. J. Schaff, S. D. Offsey, IEEE Photonics Technology Letters EngineeringHigh-speed ModulationLaser ScienceLaser ApplicationsLaser Material	1991	18
Vertical integration of an In <sub>0.15</sub> Ga <sub>0.85</sub> As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy S. D. Offsey, P.J. Tasker, W. J. Schaff, Electronics Letters	1990	11

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