Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

Abstract

A study of strained InGaAs quantum wells grown on GaAs by molecular beam epitaxy was performed in order to optimize the growth conditions for strained-layer single- and multiple-quantum-well lasers. Photoluminescence of the quantum wells shows a rapid degradation in material quality as the substrate temperature is reduced below 500 degrees C. Single-quantum-well (SQW) laser structures contain a 55 AA 35% InGaAs quantum well, while multiple-quantum-well (MQW) lasers contain four 25% or 35% InAs mole fraction 55 AA quantum wells. The 35% SQW lasers emit at 1.06 mu m, while the 25% InGaAs MQW lasers emit at 1.07 mu m. The SQW lasers have threshold current densities as low as 83 A/cm/sup 2/ for 150*1000 mu m devices. Microwave modulation bandwidths increase with an increasing In mole fraction and number of quantum wells, as predicted by theory. A differential gain of 5.0*10/sup -15/ cm/sup 2/ is calculated from the microwave response measurements for the 35% MQW devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>