M. R. Melloch

Status and prospects for SiC power MOSFETs

James A. Cooper, M. R. Melloch, Ranbir Singh et al. · IEEE Transactions on Electron Devices · 2002 · 498 citations

Engineering, Electrical Engineering, Materials Science +17

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

A.C. Warren, J. M. Woodall, J. L. Freeouf et al. · Applied Physics Letters · 1990 · 434 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

The Kondo Effect in an Artificial Quantum Dot Molecule

Hae Kyung Jeong, A. M. Chang, M. R. Melloch · Science · 2001 · 292 citations

Natural Sciences, Physics, Condensed Matter Physics +16

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M. R. Melloch, N. Ōtsuka, J. M. Woodall et al. · Applied Physics Letters · 1990 · 244 citations

Engineering, Materials Engineering, Materials Science +16

High-voltage double-implanted power MOSFET's in 6H-SiC

J. N. Shenoy, James A. Cooper, M. R. Melloch · IEEE Electron Device Letters · 1997 · 241 citations

Engineering, Electrical Engineering, Microelectronics +15