G. P. Watson

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Eugene A. Fitzgerald, G. P. Watson, R.E. Proano et al. · Journal of Applied Physics · 1989 · 309 citations

Engineering, Severe Plastic Deformation, Defect Tolerance +19

Very high mobility two-dimensional hole gas in Si/Ge<i>x</i>Si1−<i>x</i>/Ge structures grown by molecular beam epitaxy

Ya‐Hong Xie, Don Monroe, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1993 · 193 citations

Engineering, Silicon On Insulator, Semiconductor Device +17

Absorption and luminescence studies of free-standing porous silicon films

Ya Xie, Mark S. Hybertsen, William L. Wilson et al. · Physical review. B, Condensed matter · 1994 · 109 citations

Engineering, Nanoporous Material, Luminescent Glass +16

Comparison of mobility-limiting mechanisms in high-mobility Si1−<i>x</i>Ge<i>x</i> heterostructures

Don Monroe, Y. H. Xie, Eugene A. Fitzgerald et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 109 citations

Semiconductors, Semiconductor Technology, Engineering +14

Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures

P. N. Grillot, Steven A. Ringel, Eugene A. Fitzgerald et al. · Journal of Applied Physics · 1995 · 80 citations · Full text

Materials Science, Semiconductors, Dlts Peaks +12