Steven A. Ringel

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

Z. Zhang, Esmat Farzana, Aaron R. Arehart et al. · Applied Physics Letters · 2016 · 291 citations

Engineering, Materials Engineering, Materials Science +17

Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

Esmat Farzana, Zeng Zhang, Pran K. Paul et al. · Applied Physics Letters · 2017 · 192 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of carbon on trap states in <i>n</i>-type GaN grown by metalorganic chemical vapor deposition

Andrew Armstrong, Aaron R. Arehart, Brendan Moran et al. · Applied Physics Letters · 2004 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Andrew Armstrong, Aaron R. Arehart, D. Green et al. · Journal of Applied Physics · 2005 · 171 citations

Engineering, Materials Engineering, Materials Science +17

$\beta$ -Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Zhanbo Xia, Hao Xue, Chandan Joishi et al. · IEEE Electron Device Letters · 2019 · 159 citations

Engineering, Electrical Engineering, Materials Science +17