Aaron R. Arehart - Concepedia

Author

Aaron R. Arehart

Also Known As

A. Arehart, A. R. Arehart, A.R. Arehart, Aaron Arehart, Aaron R Arehart, Aaron R. Arehart, Arehart, A. R., Arehart, Aaron, Arehart, Aaron R., USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Renewable Energy. Solar Energy Technologies Office

164

Publications

Citations

H-Index

Concepts

All Affiliations

The Ohio State University University of California, Santa Barbara Vanderbilt University Indian Institute of Technology Bombay Sandia National Laboratories

About

Aaron R. Arehart is an author at The Ohio State University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	40	72	4.6K
2	Engineering	39	70	4.3K
3	Natural Sciences	10	10	586
4	Chemistry	5	5	370
5	Chemical Engineering	4	4	166

Aaron R. Arehart

Publications

4.7K

Citations

H-Index

Page 1

	Year	Citations
β-Gallium oxide power electronics Andrew J. Green, James S. Speck, Grace Xing, APL Materials Wide-bandgap SemiconductorEngineeringPower Electronic SystemsPower ElectronicsSemiconductors	2022	462
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Z. Zhang, Esmat Farzana, Aaron R. Arehart, Applied Physics Letters EngineeringOptoelectronic DevicesDefect ToleranceDeep Level DefectsSemiconductors	2016	283
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties Esmat Farzana, Zeng Zhang, Pran K. Paul, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2017	190
Impact of carbon on trap states in <i>n</i>-type GaN grown by metalorganic chemical vapor deposition Andrew Armstrong, Aaron R. Arehart, Brendan Moran, Applied Physics Letters Semiconductor TechnologyWide-bandgap SemiconductorExcess C IncorporationPhysicsTrap States	2004	178
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon Andrew Armstrong, Aaron R. Arehart, D. Green, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringElectrical ConductivityOptoelectronic DevicesDeep Level Spectrum	2005	168
$\beta$ -Ga<sub>2</sub>O<sub>3</sub> Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Zhanbo Xia, Hao Xue, Chandan Joishi, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesGallium Oxide Devices	2019	155
Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3 Esmat Farzana, Max Chaiken, Thomas E. Blue, APL Materials SemiconductorsEngineeringCrystalline DefectsPhysicsDefect States	2018	121
Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics Aaron R. Arehart, Brendan Moran, James S. Speck, Journal of Applied Physics SemiconductorsNi∕n-gan SchottkyElectrical EngineeringElectronic DevicesMeasurable Tdd Dependence	2006	119
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga<sub>2</sub>O<sub>3</sub> Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia, physica status solidi (RRL) - Rapid Research Letters EngineeringBackground DopingChemistryChemical DepositionCharge Transport	2020	119
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Esmat Farzana, Elaheh Ahmadi, James S. Speck, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringDeep Level DefectsSemiconductors	2018	117

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