Aaron R. Arehart

β-Gallium oxide power electronics

Andrew J. Green, James S. Speck, Grace Xing et al. · APL Materials · 2022 · 462 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +17

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

Z. Zhang, Esmat Farzana, Aaron R. Arehart et al. · Applied Physics Letters · 2016 · 283 citations

Engineering, Optoelectronic Devices, Defect Tolerance +20

Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

Esmat Farzana, Zeng Zhang, Pran K. Paul et al. · Applied Physics Letters · 2017 · 190 citations

Materials Science, Semiconductors, Electrical Engineering +15

Impact of carbon on trap states in <i>n</i>-type GaN grown by metalorganic chemical vapor deposition

Andrew Armstrong, Aaron R. Arehart, Brendan Moran et al. · Applied Physics Letters · 2004 · 178 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Excess C Incorporation +9

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Andrew Armstrong, Aaron R. Arehart, D. Green et al. · Journal of Applied Physics · 2005 · 168 citations

Wide-bandgap Semiconductor, Engineering, Electrical Conductivity +18