Esmat Farzana

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

Z. Zhang, Esmat Farzana, Aaron R. Arehart et al. · Applied Physics Letters · 2016 · 291 citations

Engineering, Materials Engineering, Materials Science +17

Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

Esmat Farzana, Zeng Zhang, Pran K. Paul et al. · Applied Physics Letters · 2017 · 192 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

Esmat Farzana, Max Chaiken, Thomas E. Blue et al. · APL Materials · 2018 · 127 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Esmat Farzana, Elaheh Ahmadi, James S. Speck et al. · Journal of Applied Physics · 2018 · 122 citations

Engineering, Materials Engineering, Materials Science +17

Effect of Fe-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis

Syed Moshfeq Salaken, Esmat Farzana, Jiban Podder · Journal of Semiconductors · 2013 · 89 citations

Natural Sciences, Materials Engineering, Materials Science +17