Elaheh Ahmadi

Materials issues and devices of α- and β-Ga2O3

Elaheh Ahmadi, Yuichi Oshima · Journal of Applied Physics · 2019 · 261 citations

Ge doping of β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

Elaheh Ahmadi, Onur S. Koksaldi, Stephen W. Kaun et al. · Applied Physics Express · 2017 · 259 citations

Materials Science, Materials Engineering, Oxide Heterostructures +13

N-polar GaN epitaxy and high electron mobility transistors

Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi et al. · Semiconductor Science and Technology · 2013 · 222 citations

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

Neil Moser, Jonathan P. McCandless, Antonio Crespo et al. · IEEE Electron Device Letters · 2017 · 222 citations

Materials Science, Semiconductors, Electrical Engineering +12

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

Brian Romanczyk, Steven Wienecke, Matthew Guidry et al. · IEEE Transactions on Electron Devices · 2017 · 220 citations

Wide-bandgap Semiconductor, Electrical Engineering, Constant 8 +14