Elaheh Ahmadi - Concepedia

Author

Elaheh Ahmadi

University of California, Santa Barbara ORCID

Also Known As

Ahmadi, Elaheh, E Ahmadi, E. Ahmadi, E. D. Ahmadi, Elaheh Ahmadi

121

Publications

3.9K

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara University of Michigan University of California, Los Angeles

About

Elaheh Ahmadi is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	60	3.1K
2	Applied Physics	29	58	3.1K
3	Electrical Engineering	25	45	2K
4	Chemistry	2	2	124
5	Chemical Engineering	1	1	98

Elaheh Ahmadi

Publications

3.8K

Citations

H-Index

Page 1

	Year	Citations
Materials issues and devices of α- and β-Ga2O3 Elaheh Ahmadi, Yuichi Oshima Journal of Applied Physics	2019	261
Ge doping of β-Ga<sub>2</sub>O<sub>3</sub> films grown by plasma-assisted molecular beam epitaxy Elaheh Ahmadi, Onur S. Koksaldi, Stephen W. Kaun, Applied Physics Express Materials ScienceMaterials EngineeringOxide HeterostructuresEngineeringElectronic Materials	2017	259
N-polar GaN epitaxy and high electron mobility transistors Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi, Semiconductor Science and Technology	2013	222
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs Neil Moser, Jonathan P. McCandless, Antonio Crespo, IEEE Electron Device Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesGe-doped Channel Devices	2017	222
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs Brian Romanczyk, Steven Wienecke, Matthew Guidry, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringConstant 8EngineeringGan Cap Layer	2017	220
Demonstration of β-(Al<i><sub>x</sub></i>Ga<sub>1−</sub><i><sub>x</sub></i>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub>modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy Elaheh Ahmadi, Onur S. Koksaldi, Xun Zheng, Applied Physics Express SemiconductorsMaterials ScienceOxide HeterostructuresAtomic Force MicroscopyEngineering	2017	206
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Esmat Farzana, Elaheh Ahmadi, James S. Speck, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringDeep Level DefectsSemiconductors	2018	117
An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory Ding Wang, Ping Wang, Shubham Mondal, Advanced Electronic Materials SemiconductorsOxide HeterostructuresElectrical EngineeringMaterials ScienceFerroelectric Field Effect	2022	117
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Brian Romanczyk, Xun Zheng, Matthew Guidry, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringAdditional PassivationEngineeringW-band Power Performance	2020	112
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz Steven Wienecke, Brian Romanczyk, Matthew Guidry, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	2017	109

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