Onur S. Koksaldi

Ge doping of β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

Elaheh Ahmadi, Onur S. Koksaldi, Stephen W. Kaun et al. · Applied Physics Express · 2017 · 259 citations

Materials Science, Materials Engineering, Oxide Heterostructures +13

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

Yuewei Zhang, Fikadu Alema, Akhil Mauze et al. · APL Materials · 2018 · 251 citations · Full text

Wide-bandgap Semiconductor, Engineering, Electron Mobility +18

Demonstration of β-(Al<i>_x</i>Ga₁₋<i>_x</i>)₂O₃/β-Ga₂O₃modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

Elaheh Ahmadi, Onur S. Koksaldi, Xun Zheng et al. · Applied Physics Express · 2017 · 206 citations

Semiconductors, Materials Science, Oxide Heterostructures +14

N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

Onur S. Koksaldi, J. Robert Haller, Haoran Li et al. · IEEE Electron Device Letters · 2018 · 96 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels

Chirag Gupta, Silvia H. Chan, Cory Lund et al. · Applied Physics Express · 2016 · 54 citations

Gan Trench-gate Mosfets, Semiconductor Technology, Electrical Engineering +13