Cory Lund

In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates

Chirag Gupta, Cory Lund, Silvia H. Chan et al. · IEEE Electron Device Letters · 2017 · 162 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +11

Review—The Physics of Recombinations in III-Nitride Emitters

Aurélien David, Nathan G. Young, Cory Lund et al. · ECS Journal of Solid State Science and Technology · 2019 · 100 citations · Full text

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +12

Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Dong Ji, Chirag Gupta, Anchal Agarwal et al. · IEEE Electron Device Letters · 2018 · 73 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels

Chirag Gupta, Silvia H. Chan, Cory Lund et al. · Applied Physics Express · 2016 · 54 citations

Gan Trench-gate Mosfets, Semiconductor Technology, Electrical Engineering +13

Relaxed<i>c</i>-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

Karine Hestroffer, Feng Wu, Haoran Li et al. · Semiconductor Science and Technology · 2015 · 51 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Nanostructures +16