Concepedia

Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels

Chirag Gupta, Silvia H. Chan, Cory Lund, Anchal Agarwal, Onur S. Koksaldi, Junqian Liu, Yuuki Enatsu, S. Keller, Umesh K. Mishra

Applied Physics Express · 2016 · 54 citations · 13 references

DOI

Concepts

Abstract

Abstract GaN trench-gate MOSFETs with m - and a -plane-oriented sidewall channels were fabricated and characterized. The trench-gate MOSFET performance depended strongly on the sidewall-MOS-channel plane orientation. The m -plane-oriented MOS channel devices demonstrated higher channel mobility, higher current density, lower sub-threshold slope, and lower hysteresis with similar threshold voltage and on–off ratio compared to a -plane MOS channel devices. These results indicate that orienting trench-gate MOSFET toward the m -plane would allow for better on-state characteristics while maintaining similar off-state characteristics.

References

13

1.8 mΩ·cm<sup>2</sup>vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

Tohru OKA, Tsutomu Ina, Yukihisa Ueno et al. · Applied Physics Express · 2015 · 339 citations

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1.5-kV and 2.2-m&lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;\(\Omega \) &lt;/tex-math&gt;&lt;/inline-formula&gt;-cm&lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;\(^{2}\) &lt;/tex-math&gt;&lt;/inline-formula&gt; Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez et al. · IEEE Electron Device Letters · 2014 · 333 citations

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GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Masahito Kodama, M. Sugimoto, Eiko Hayashi et al. · Applied Physics Express · 2008 · 258 citations

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Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

Hirotaka Otake, Kentaro Chikamatsu, Atsushi Yamaguchi et al. · Applied Physics Express · 2008 · 223 citations

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Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

Huili Grace Xing, Daniel S. Green, Haijiang Yu et al. · Japanese Journal of Applied Physics · 2003 · 175 citations

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