Tsutomu Ina

1.8 mΩ·cm²vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

Tohru OKA, Tsutomu Ina, Yukihisa Ueno et al. · Applied Physics Express · 2015 · 339 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

Tohru OKA, Yukihisa Ueno, Tsutomu Ina et al. · Applied Physics Express · 2014 · 216 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate

Tohru OKA, Tsutomu Ina, Yukihisa Ueno et al. · 2016 · 61 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer

Tohru OKA, Tsutomu Ina, Yukihisa Ueno et al. · 2019 · 29 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10