Tohru OKA

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

Tohru OKA, Tomohiro Nozawa · IEEE Electron Device Letters · 2008 · 392 citations

Engineering, Electrical Engineering, Materials Science +17

1.8 mΩ·cm²vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

Tohru OKA, Tsutomu Ina, Yukihisa Ueno et al. · Applied Physics Express · 2015 · 350 citations

Engineering, Electrical Engineering, Microelectronics +15

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

Tohru OKA, Yukihisa Ueno, Tsutomu Ina et al. · Applied Physics Express · 2014 · 219 citations

Engineering, Electrical Engineering, Circuit Theory +11

Recent development of vertical GaN power devices

Tohru OKA · Japanese Journal of Applied Physics · 2019 · 203 citations

Engineering, Electrical Engineering, Materials Engineering +17

50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V

Nariaki Tanaka, Kazuya Hasegawa, Kota Yasunishi et al. · Applied Physics Express · 2015 · 128 citations

Engineering, Electrical Engineering, Materials Science +14