Tohru OKA

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

Tohru OKA, Tomohiro Nozawa · IEEE Electron Device Letters · 2008 · 387 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

1.8 mΩ·cm²vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

Tohru OKA, Tsutomu Ina, Yukihisa Ueno et al. · Applied Physics Express · 2015 · 339 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

Tohru OKA, Yukihisa Ueno, Tsutomu Ina et al. · Applied Physics Express · 2014 · 216 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Recent development of vertical GaN power devices

Tohru OKA · Japanese Journal of Applied Physics · 2019 · 193 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V

Nariaki Tanaka, Kazuya Hasegawa, Kota Yasunishi et al. · Applied Physics Express · 2015 · 126 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6