Nariaki Tanaka

50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V

Nariaki Tanaka, Kazuya Hasegawa, Kota Yasunishi et al. · Applied Physics Express · 2015 · 126 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750 V

Kazuya Hasegawa, Go Nishio, Kota Yasunishi et al. · Applied Physics Express · 2017 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Estimation of Δ_fof nitro derivatives of benzene and toluene using AM1 and DSC

Dong-Rong Hwang, Masamitsu Tamura, Tadao Yoshida et al. · Journal of Energetic Materials · 1990 · 23 citations

Chemical Kinetics, Engineering, Moderate Accuracy +16

Reduction of self‐heating in AlGaN/GaN HFETs using thick AlN surface passivation films

Nariaki Tanaka, Hayato Takita, Yoshio Sumida et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 14 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17

Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation

Nariaki Tanaka, Yasunobu Sumida, H. Kawai et al. · Japanese Journal of Applied Physics · 2009 · 12 citations

Aluminium Nitride, Electrical Engineering, Engineering +14