Masahito Kodama

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Masahito Kodama, M. Sugimoto, Eiko Hayashi et al. · Applied Physics Express · 2008 · 258 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Masakazu Kanechika, M. Sugimoto, Narumasa Soejima et al. · Japanese Journal of Applied Physics · 2007 · 169 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +8

A Concept of SOI RESURF Lateral Devices With Striped Trench Electrodes

Masakazu Kanechika, Masahito Kodama, Tsutomu Uesugi et al. · IEEE Transactions on Electron Devices · 2005 · 18 citations

Electrical Engineering, Trench Electrodes, Engineering +14

Shallow angle implantation for extended trench gate power MOSFETs with super junction structure

Yoshitsugu Hattori, Tomiko M. Suzuki, Masahito Kodama et al. · 2002 · 16 citations

Electrical Engineering, Shallow Angle Implantation, Engineering +13

New 3-D lateral power MOSFETs with ultra low on-resistance

Tsutomu Uesugi, Masahito Kodama, Sachiko Kawaji et al. · 2002 · 12 citations

Low-power Electronics, Electrical Engineering, Engineering +11