M. Sugimoto

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Masahito Kodama, M. Sugimoto, Eiko Hayashi et al. · Applied Physics Express · 2008 · 258 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Masakazu Kanechika, M. Sugimoto, Narumasa Soejima et al. · Japanese Journal of Applied Physics · 2007 · 169 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +8

Double heterostructure optoelectronic switch as a dynamic memory with low-power consumption

K. Kasahara, Y. Tashiro, N. Hamao et al. · Applied Physics Letters · 1988 · 130 citations

Optical Materials, Optical Technologies, Engineering +24

Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

Shin-ichi Kan, Shu Takemoto, Kentaro Kaneko et al. · Applied Physics Letters · 2018 · 101 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Surface-emitting laser operation in vertical-to-surface transmission electrophotonic devices with a vertical cavity

Takahiro Numai, M. Sugimoto, I. Ogura et al. · Applied Physics Letters · 1991 · 96 citations

Photonics, Electrical Engineering, Engineering +11