Narumasa Soejima

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Masahito Kodama, M. Sugimoto, Eiko Hayashi et al. · Applied Physics Express · 2008 · 258 citations

Engineering, Electrical Engineering, Materials Engineering +17

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Masakazu Kanechika, M. Sugimoto, Narumasa Soejima et al. · Japanese Journal of Applied Physics · 2007 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

A 4H-SiC trench MOSFET with thick bottom oxide for improving characteristics

Hidefumi Takaya, Jun Morimoto, Kimimori Hamada et al. · 2013 · 47 citations

Engineering, Electrical Engineering, Electronic Materials +16

Electrical Properties of Metal–Insulator–Semiconductor Capacitors on Freestanding GaN Substrate

Eun Hee Kim, Narumasa Soejima, Yukihiko Watanabe et al. · Japanese Journal of Applied Physics · 2010 · 29 citations

Engineering, Electrical Engineering, Materials Engineering +17

Depth-selective X-ray absorption spectroscopy by detection of energy-loss Auger electrons

Noritake Isomura, Narumasa Soejima, Shiro Iwasaki et al. · Applied Surface Science · 2015 · 22 citations

Natural Sciences, Materials Science, Radiation Detection +12