Tsutomu Uesugi

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Masahito Kodama, M. Sugimoto, Eiko Hayashi et al. · Applied Physics Express · 2008 · 258 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Masakazu Kanechika, M. Sugimoto, Narumasa Soejima et al. · Japanese Journal of Applied Physics · 2007 · 169 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +8

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Takuya Maeda, Tetsuo Narita, Hiroyuki Ueda et al. · IEEE Electron Device Letters · 2019 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

P-type doping of GaN by magnesium ion implantation

Tetsuo Narita, Tetsu Kachi, Keita Kataoka et al. · Applied Physics Express · 2016 · 104 citations

Materials Engineering, Magnesium Ion Implantation, Electrical Engineering +9

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

Naoki Sawada, Tetsuo Narita, Masakazu Kanechika et al. · Applied Physics Express · 2018 · 70 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +7