Tetsuo Narita

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Hideki Sakurai, Masato Omori, Shinji Yamada et al. · Applied Physics Letters · 2019 · 168 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Impact ionization coefficients and critical electric field in GaN

Takuya Maeda, Tetsuo Narita, Shinji Yamada et al. · Journal of Applied Physics · 2021 · 112 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Takuya Maeda, Tetsuo Narita, Hiroyuki Ueda et al. · IEEE Electron Device Letters · 2019 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Progress on and challenges of p-type formation for GaN power devices

Tetsuo Narita, Hikaru Yoshida, Kazuyoshi Tomita et al. · Journal of Applied Physics · 2020 · 106 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

P-type doping of GaN by magnesium ion implantation

Tetsuo Narita, Tetsu Kachi, Keita Kataoka et al. · Applied Physics Express · 2016 · 104 citations

Materials Engineering, Magnesium Ion Implantation, Electrical Engineering +9