Masato Omori

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Hideki Sakurai, Masato Omori, Shinji Yamada et al. · Applied Physics Letters · 2019 · 168 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

Hideki Sakurai, Tetsuo Narita, Masato Omori et al. · Applied Physics Express · 2020 · 57 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

Shinji Yamada, Masato Omori, Hideki Sakurai et al. · Applied Physics Express · 2019 · 45 citations

Semiconductor Technology, Electrical Engineering, Bias Power +12

Determination of Mg acceptor concentration in GaN through photoluminescence

Masato Omori, Taisei Miyazaki, K. Watanabe et al. · Applied Physics Express · 2021 · 11 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

Masamichi Akazawa, Ryo Kamoshida, Shunta Murai et al. · physica status solidi (b) · 2019 · 10 citations