Shinji Yamada

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Hideki Sakurai, Masato Omori, Shinji Yamada et al. · Applied Physics Letters · 2019 · 168 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Impact ionization coefficients and critical electric field in GaN

Takuya Maeda, Tetsuo Narita, Shinji Yamada et al. · Journal of Applied Physics · 2021 · 112 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

Hideki Sakurai, Tetsuo Narita, Masato Omori et al. · Applied Physics Express · 2020 · 57 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

Shinji Yamada, Masato Omori, Hideki Sakurai et al. · Applied Physics Express · 2019 · 45 citations

Semiconductor Technology, Electrical Engineering, Bias Power +12

Effects of the sequential implantation of Mg and N ions into GaN for p-type doping

Hideki Sakurai, Tetsuo Narita, Keita Kataoka et al. · Applied Physics Express · 2021 · 35 citations

Materials Engineering, Materials Science, Electrical Engineering +12