Hiroyuki Ueda

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Masahito Kodama, M. Sugimoto, Eiko Hayashi et al. · Applied Physics Express · 2008 · 258 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Masakazu Kanechika, M. Sugimoto, Narumasa Soejima et al. · Japanese Journal of Applied Physics · 2007 · 169 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +8

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Takuya Maeda, Tetsuo Narita, Hiroyuki Ueda et al. · IEEE Electron Device Letters · 2019 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs)

T. Ohnakado, Satoshi Yamakawa, T. Murakami et al. · IEEE Journal of Solid-State Circuits · 2004 · 64 citations

Electrical Engineering, Depletion-layer-extended Transistors, Depletion-layer-extended Transistor +9

DLTS study of n-type GaN grown by MOCVD on GaN substrates

Yutaka Tokuda, Youichi Matsuoka, Hiroyuki Ueda et al. · Superlattices and Microstructures · 2006 · 54 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +8