Hiroyuki Ueda

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Masahito Kodama, M. Sugimoto, Eiko Hayashi et al. · Applied Physics Express · 2008 · 258 citations

Engineering, Electrical Engineering, Materials Engineering +17

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Masakazu Kanechika, M. Sugimoto, Narumasa Soejima et al. · Japanese Journal of Applied Physics · 2007 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Takuya Maeda, Tetsuo Narita, Hiroyuki Ueda et al. · IEEE Electron Device Letters · 2019 · 113 citations

Engineering, Electrical Engineering, Materials Science +17

21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs)

T. Ohnakado, Satoshi Yamakawa, T. Murakami et al. · IEEE Journal of Solid-State Circuits · 2004 · 64 citations

Engineering, Electrical Engineering, Microelectronics +16

DLTS study of n-type GaN grown by MOCVD on GaN substrates

Yutaka Tokuda, Youichi Matsuoka, Hiroyuki Ueda et al. · Superlattices and Microstructures · 2006 · 55 citations

Engineering, Materials Engineering, Materials Science +13