Quentin Diduck

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez et al. · IEEE Electron Device Letters · 2014 · 333 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Nonlinear characteristics of T-branch junctions: Transition from ballistic to diffusive regime

Hiroshi Irie, Quentin Diduck, Martin Margala et al. · Applied Physics Letters · 2008 · 33 citations

Engineering, Device Size, Nonlinear Ballistic Effect +17

Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Quentin Diduck, Jonathan Felbinger, L.F. Eastman et al. · Electronics Letters · 2009 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS

Quentin Diduck, Hiroshi Irie, Martin Margala · International Journal of High Speed Electronics and Systems · 2009 · 29 citations

Wide-bandgap Semiconductor, Ballistic Electron Transport, Electrical Engineering +11

A Terahertz Transistor Based on Geometrical Deflection of Ballistic Current

Quentin Diduck, Martin Margala, M. J. Feldman · 2006 · 25 citations

Ballistic Electron Transport, Electrical Engineering, Engineering +11