Jonathan Felbinger

Comparison of GaN HEMTs on Diamond and SiC Substrates

Jonathan Felbinger, M. V. Sharath Chandra, Yunju Sun et al. · IEEE Electron Device Letters · 2007 · 159 citations

Semiconductors, Gan-on-diamond Transistors, Electrical Engineering +11

Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration

G. D. Via, Jonathan Felbinger, J. D. Blevins et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2014 · 35 citations · Full text

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Quentin Diduck, Jonathan Felbinger, L.F. Eastman et al. · Electronics Letters · 2009 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

S2-T1: GaN-on-diamond: A brief history

Felix Ejeckam, Daniel Francis, Firooz Faili et al. · 2014 · 21 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14

GaN-on-diamond field-effect transistors: from wafers to amplifier modules

D.I. Babic, Quentin Diduck, P. Yenigalla et al. · The 33rd International Convention MIPRO · 2010 · 18 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11