Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration

Abstract

Abstract A wafer‐scale comparison of HEMTs fabricated on as‐grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room‐temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN‐based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high‐thermal‐conductivity substrate. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)