Gregg H. Jessen

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

Andrew J. Green, Kelson D. Chabak, Eric R. Heller et al. · IEEE Electron Device Letters · 2016 · 550 citations

Materials Engineering, Materials Science, Epitaxial Growth +15

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green et al. · Applied Physics Letters · 2016 · 359 citations · Full text

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

Yuewei Zhang, Adam T. Neal, Zhanbo Xia et al. · Applied Physics Letters · 2018 · 338 citations

Materials Science, Oxide Heterostructures, Semiconductors +14

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

Gregg H. Jessen, Robert Fitch, J. Gillespie et al. · IEEE Transactions on Electron Devices · 2007 · 324 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Andrew J. Green, Kelson D. Chabak, M. Baldini et al. · IEEE Electron Device Letters · 2017 · 308 citations

Rf Devices, Electrical Engineering, Engineering +11