J. Gillespie

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

Gregg H. Jessen, Robert Fitch, J. Gillespie et al. · IEEE Transactions on Electron Devices · 2007 · 334 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim et al. · Applied Physics Letters · 2003 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

Andrew J. Green, J. Gillespie, Robert Fitch et al. · IEEE Electron Device Letters · 2019 · 127 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Antonio Crespo, Mark Bellot, Kelson D. Chabak et al. · IEEE Electron Device Letters · 2009 · 106 citations

Engineering, Electrical Engineering, Materials Science +17

Wet Chemical Digital Etching of GaAs at Room Temperature

G. DeSalvo, C. Bozada, J. Ebel et al. · Journal of The Electrochemical Society · 1996 · 87 citations

Engineering, Electrical Engineering, Materials Science +17