G. DeSalvo - Concepedia

Author

G. DeSalvo

Northrop Grumman (United States)

Also Known As

G. C. DESALVO, G. C. DeSalvo, G. DeSalvo, G. Desalvo, G.C. DeSalvo, Gregory C. DeSalvo, Gregory DeSalvo

Publications

561

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)Wright-Patterson Air Force Base University of Delaware National Institute of Standards and Technology

About

G. DeSalvo is an author at Northrop Grumman (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	444
2	Electrical Engineering	10	10	443
3	Applied Physics	8	8	418
4	Chemical Engineering	1	1	46
5	Materials Engineering	1	1	13

G. DeSalvo

Publications

465

Citations

H-Index

Page 1

	Year	Citations
Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP G. DeSalvo, Wen Feng Tseng, J. Comas Journal of The Electrochemical Society EngineeringElectron-beam LithographyOptoelectronic DevicesElectronic DevicesBeam Lithography	1992	166
Wet Chemical Digital Etching of GaAs at Room Temperature G. DeSalvo, C. Bozada, J. Ebel, Journal of The Electrochemical Society SemiconductorsRoom TemperatureElectrical EngineeringEngineeringMicrofabrication	1996	86
S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE H.G. Henry, G. Augustine, G. DeSalvo, IEEE Transactions on Electron Devices EngineeringSic MesfetPower ElectronicsElectromagnetic CompatibilitySemiconductor Device	2004	54
Citric Acid Etching of GaAs1 − x Sb x , Al0.5Ga0.5Sb , and InAs for Heterostructure Device Fabrication G. DeSalvo, R. Kaspi, C. Bozada Journal of The Electrochemical Society EngineeringSemiconductor MaterialsOptoelectronic DevicesSilicon On InsulatorSemiconductor Device	1994	46
Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts G. DeSalvo Journal of Applied Physics EngineeringTunnel JunctionsOptoelectronic DevicesInterdevice Ohmic ContactsDelta Doping	1993	21
Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures D. C. Look, B. Jogai, C. E. Stutz, Journal of Applied Physics Depleted CapConcentration N2dElectrical EngineeringEngineeringRf Semiconductor	1994	17
Silicon Carbide Terahertz Emitting Devices G. Xuan, Panpan Lv, X. Zhang, Journal of Electronic Materials Thz PhotonicsElectrical EngineeringTerahertz DevicesEngineeringApplied Physics	2008	16
A 6 to 16 GHz Linearized GaN Power Amplifier Allen Katz, Michael Kubak, G. DeSalvo Electrical EngineeringPredistortion LinearizerEngineeringFirst LinearizerRf Semiconductor	2006	13
A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation G.L. Katulka, K. Roe, J. Kolodzey, Journal of Electronic Materials Materials ScienceMaterials EngineeringElectrical Engineering4H-silicon CarbideEngineering	2002	13
Lattice damage and atomic mixing induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures Daming Huang, Maria Kallergi, J. L. Aubel, Journal of Applied Physics EngineeringSemiconductorsIon ImplantationExcitonic PeaksMolecular Beam Epitaxy	1991	12

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