Concepedia

G. DeSalvo

GD

12

Publications

465

Citations

11

H-Index

1991

Active since

Affiliations

Northrop Grumman (United States)(Current)

Wright-Patterson Air Force Base

University of Delaware

National Institute of Standards and Technology

G. DeSalvo is an author at Northrop Grumman (United States) specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsOptoelectronicsMaterial ScienceSemiconductorsNanoelectronicsElectronic DevicesOptoelectronic Devices

Publications per year

1991–2008

12

Publications

12

Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP

G. DeSalvo, Wen Feng Tseng, J. Comas · Journal of The Electrochemical Society · 1992 · 166 citations

Engineering, Electron-beam Lithography, Optoelectronic Devices +16

Wet Chemical Digital Etching of GaAs at Room Temperature

G. DeSalvo, C. Bozada, J. Ebel et al. · Journal of The Electrochemical Society · 1996 · 86 citations

Semiconductors, Room Temperature, Electrical Engineering +12

S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE

H.G. Henry, G. Augustine, G. DeSalvo et al. · IEEE Transactions on Electron Devices · 2004 · 54 citations

Engineering, Sic Mesfet, Power Electronics +17

Citric Acid Etching of GaAs1 − x Sb x , Al0.5Ga0.5Sb , and InAs for Heterostructure Device Fabrication

G. DeSalvo, R. Kaspi, C. Bozada · Journal of The Electrochemical Society · 1994 · 46 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +19

Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts

G. DeSalvo · Journal of Applied Physics · 1993 · 21 citations

Engineering, Tunnel Junctions, Optoelectronic Devices +16

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