G. Augustine

Statistics

Publications

Citations

833

H-Index

Active since

1992

Affiliations

Northrop Grumman (United States)(Current)

Carnegie Mellon University

Westinghouse Electric (United States)

Georgia Institute of Technology

Cree (China)

G. Augustine is an author at Northrop Grumman (United States) specializing in materials science, semiconductor materials, and silicon carbide (sic) materials.

Publications per year

1992–2004

Publications

Semi-insulating 6H–SiC grown by physical vapor transport

H. McD. Hobgood, R Glass, G. Augustine et al. · Applied Physics Letters · 1995 · 161 citations

Engineering, Materials Engineering, Materials Science +17

Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype

G. Augustine, McD. Hobgood, V. Balakrishna et al. · physica status solidi (b) · 1997 · 97 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC

Jason R. Jenny, J. Skowronski, W. C. Mitchel et al. · Applied Physics Letters · 1996 · 88 citations

Natural Sciences, Materials Science, Physics +17

4H-SiC MESFET's with 42 GHz f/sub max/

S. Sriram, G. Augustine, Albert A. Burk et al. · IEEE Electron Device Letters · 1996 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

On the compensation mechanism in high-resistivity 6H–SiC doped with vanadium

Jason R. Jenny, Marek Skowroński, W. C. Mitchel et al. · Journal of Applied Physics · 1995 · 69 citations

Natural Sciences, Materials Science, Physics +17

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