Marek Skowroński - Concepedia

Author

Marek Skowroński

Also Known As

M SAS SKOWRONSKI, M Skowronski, M. SKOWRONSKI, M. Skowronski, M. Skowroński, Marek Skowronski, Marek Skowroński, Skowronski, M., Skowronski, Marek, WEBB

356

Publications

9.3K

Citations

H-Index

Concepts

All Affiliations

Carnegie Mellon University Pennsylvania State University Freeport-McMoRan (United States)United States Naval Research Laboratory Stony Brook University

About

Marek Skowroński is an author at Carnegie Mellon University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	48	130	7.7K
2	Applied Physics	48	125	7.5K
3	Chemistry	9	9	242
4	Natural Sciences	6	6	124
5	Chemical Engineering	2	2	150

Marek Skowroński

148

Publications

8.5K

Citations

H-Index

Page 1

	Year	Citations
Degradation of hexagonal silicon-carbide-based bipolar devices Marek Skowroński, S. Ha Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2006	458
Determination of wurtzite GaN lattice polarity based on surface reconstruction Arthur R. Smith, R. M. Feenstra, David W. Greve, Applied Physics Letters Materials ScienceMaterials EngineeringPolarity AssignmentWide-bandgap SemiconductorEngineering	1998	305
Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy Weijin Qian, Marek Skowroński, Marc De Graef, Applied Physics Letters Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringCrystalline Defects	1995	284
Reconstructions of GaN(0001) and (0001) surfaces: Ga-rich metallic structures Arthur R. Smith, R. M. Feenstra, David W. Greve, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena	1998	242
Dislocation conversion in 4H silicon carbide epitaxy S. Ha, P. Mieszkowski, Marek Skowroński, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringDislocation InteractionApplied Physics	2002	234
Lifetime-limiting defects in n− 4H-SiC epilayers P. B. Klein, B. V. Shanabrook, S. Huh, Applied Physics Letters SemiconductorsDeep Trap SpectraSemiconductor TechnologyEngineeringPhysics	2006	215
Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy Weijin Qian, Gregory S. Rohrer, Marek Skowroński, Applied Physics Letters Wide-bandgap SemiconductorEngineeringForce MicroscopyScrew DislocationsOpen-core Dislocation	1995	215
Intracenter transitions in the dominant deep level (EL2) in GaAs M. Kamińska, Marek Skowroński, J. Łagowski, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringPhotoluminescenceEngineering	1983	196
Structure of recombination-induced stacking faults in high-voltage SiC <i>p–n</i> junctions J. Q. Liu, Marek Skowroński, C. Hallin, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringEngineeringCrystalline DefectsApplied Physics	2002	182
Semi-insulating 6H–SiC grown by physical vapor transport H. McD. Hobgood, R Glass, G. Augustine, Applied Physics Letters Materials EngineeringSemiconductorsElectrical EngineeringMaterials ScienceEngineering	1995	160

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