Marek Skowroński

Degradation of hexagonal silicon-carbide-based bipolar devices

Marek Skowroński, S. Ha · Journal of Applied Physics · 2006 · 458 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Determination of wurtzite GaN lattice polarity based on surface reconstruction

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Applied Physics Letters · 1998 · 305 citations

Materials Science, Materials Engineering, Polarity Assignment +15

Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy

Weijin Qian, Marek Skowroński, Marc De Graef et al. · Applied Physics Letters · 1995 · 284 citations

Materials Science, Aluminium Nitride, Wide-bandgap Semiconductor +13

Reconstructions of GaN(0001) and (0001) surfaces: Ga-rich metallic structures

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 242 citations

Dislocation conversion in 4H silicon carbide epitaxy

S. Ha, P. Mieszkowski, Marek Skowroński et al. · Journal of Crystal Growth · 2002 · 234 citations

Materials Engineering, Materials Science, Engineering +4