Marek Skowroński

Degradation of hexagonal silicon-carbide-based bipolar devices

Marek Skowroński, S. Ha · Journal of Applied Physics · 2006 · 466 citations

Engineering, Materials Science, Physics +17

Determination of wurtzite GaN lattice polarity based on surface reconstruction

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Applied Physics Letters · 1998 · 306 citations

Natural Sciences, Materials Engineering, Materials Science +17

Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy

Weijin Qian, Marek Skowroński, Marc De Graef et al. · Applied Physics Letters · 1995 · 284 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reconstructions of GaN(0001) and (0001) surfaces: Ga-rich metallic structures

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 244 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dislocation conversion in 4H silicon carbide epitaxy

S. Ha, P. Mieszkowski, Marek Skowroński et al. · Journal of Crystal Growth · 2002 · 238 citations

Engineering, Materials Engineering, Materials Science +14