S. Ha - Concepedia

Author

S. Ha

Carnegie Mellon University

Also Known As

S. Ha, Seo Ha, Seo Young Ha, Seoyong Ha

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Carnegie Mellon University Stony Brook University State University of New York Wolfspeed, Inc. (United States)Cree (China)

About

S. Ha is an author at Carnegie Mellon University specializing in engineering, applied physics, and materials engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	15	1.3K
2	Applied Physics	11	12	1.2K
3	Materials Engineering	10	11	696
4	Materials Science	10	10	630
5	Electrical Engineering	5	5	691

S. Ha

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Degradation of hexagonal silicon-carbide-based bipolar devices Marek Skowroński, S. Ha Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2006	458
Dislocation conversion in 4H silicon carbide epitaxy S. Ha, P. Mieszkowski, Marek Skowroński, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringDislocation InteractionApplied Physics	2002	234
Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes S. Ha, Marek Skowroński, H. Lendenmann Journal of Applied Physics Materials ScienceDefect ToleranceEngineeringDislocation InteractionCrystalline Defects	2004	90
Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das, Materials science forum EngineeringSemiconductor DeviceNanoelectronicsElectronic PackagingPower Electronic Devices	2006	90
Core structure and properties of partial dislocations in silicon carbide p-i-n diodes S. Ha, Mourad Benamara, Marek Skowroński, Applied Physics Letters Materials EngineeringElectrical EngineeringSemiconductor DevicePartial DislocationsEngineering	2003	86
Integrated process modeling and experimental validation of silicon carbide sublimation growth H. Zhang, S. Ha, Marek Skowroński Journal of Crystal Growth Materials EngineeringMaterials ScienceProcess IntensificationEngineeringExperimental Validation	2003	52
Dislocation nucleation in 4H silicon carbide epitaxy S. Ha, Hyun‐Jong Chung, Noel T. Nuhfer, Journal of Crystal Growth Materials EngineeringMaterials ScienceDislocation NucleationEngineeringDislocation Interaction	2003	48
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Joseph J. Sumakeris, Mrinal K. Das, H. McD. Hobgood, Materials science forum Electrical EngineeringEngineeringPower DeviceBias Temperature InstabilityMicroelectronics	2004	47
Cross-sectional structure of carrot defects in 4H–SiC epilayers Xuan Zhang, S. Ha, Mourad Benamara, Applied Physics Letters Materials EngineeringMaterials ScienceEngineeringCross-sectional StructureCrystalline Defects	2004	43
A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers S. Ha, William M. Vetter, Michael Dudley, Materials science forum Materials ScienceMaterials EngineeringElementary Screw DislocationsEngineeringDislocation Interaction	2002	43

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