S. Ha

Degradation of hexagonal silicon-carbide-based bipolar devices

Marek Skowroński, S. Ha · Journal of Applied Physics · 2006 · 466 citations

Engineering, Materials Science, Physics +17

Dislocation conversion in 4H silicon carbide epitaxy

S. Ha, P. Mieszkowski, Marek Skowroński et al. · Journal of Crystal Growth · 2002 · 238 citations

Engineering, Materials Engineering, Materials Science +14

Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes

S. Ha, Marek Skowroński, H. Lendenmann · Journal of Applied Physics · 2004 · 91 citations

Engineering, Materials Engineering, Materials Science +17

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices

Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das et al. · Materials science forum · 2006 · 91 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Core structure and properties of partial dislocations in silicon carbide p-i-n diodes

S. Ha, Mourad Benamara, Marek Skowroński et al. · Applied Physics Letters · 2003 · 90 citations

Engineering, Electrical Engineering, Materials Science +17