Core structure and properties of partial dislocations in silicon carbide p-i-n diodes

Abstract

The electroluminescence, mobility, and core nature of partial dislocations bounding stacking faults in 4H silicon carbide p-i-n diodes were investigated using optical emission microscopy and transmission electron microscopy (TEM). The stacking faults developed and expanded in the blocking layer during high current forward biasing. Their bounding partial dislocations showed two distinct characteristics. Bright luminescent segments were mobile while dark invisible ones were stationary during biasing. TEM analysis of their Burgers vectors indicated that the mobile segments were silicon-core 30° partial dislocations while the immobile segments were carbon-core 30° ones.