C. Hallin

Silicon vacancy related defect in 4H and 6H SiC

E. Sörman, Nguyên Tiên Són, Weimin Chen et al. · Physical review. B, Condensed matter · 2000 · 258 citations

Engineering, Materials Engineering, Materials Science +17

Structure of recombination-induced stacking faults in high-voltage SiC <i>p–n</i> junctions

J. Q. Liu, Marek Skowroński, C. Hallin et al. · Applied Physics Letters · 2002 · 185 citations

Engineering, Materials Engineering, Materials Science +17

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Q. Wahab, A. Ellison, Anne Henry et al. · Applied Physics Letters · 2000 · 170 citations

Engineering, Electrical Engineering, Materials Science +17

Auger recombination in 4H-SiC: Unusual temperature behavior

Augustinas Galeckas, Jan Linnros, V. Grivickas et al. · Applied Physics Letters · 1997 · 149 citations

Engineering, Materials Engineering, Materials Science +15

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Lendenmann, Fanny Dahlquist, Peder Bergman et al. · Materials science forum · 2002 · 140 citations · Full text

Engineering, Electrical Engineering, Materials Science +14