C. Hallin

Silicon vacancy related defect in 4H and 6H SiC

E. Sörman, Nguyên Tiên Són, Weimin Chen et al. · Physical review. B, Condensed matter · 2000 · 250 citations

Ii-vi Semiconductor, Triplet States, Engineering +12

Structure of recombination-induced stacking faults in high-voltage SiC <i>p–n</i> junctions

J. Q. Liu, Marek Skowroński, C. Hallin et al. · Applied Physics Letters · 2002 · 182 citations

Semiconductor Technology, Electrical Engineering, Engineering +8

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Q. Wahab, A. Ellison, Anne Henry et al. · Applied Physics Letters · 2000 · 169 citations

Semiconductor Technology, Electrical Engineering, Epitaxial Growth +14

Auger recombination in 4H-SiC: Unusual temperature behavior

Augustinas Galeckas, Jan Linnros, V. Grivickas et al. · Applied Physics Letters · 1997 · 146 citations

Materials Engineering, Semiconductors, Semiconductor Technology +12

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Lendenmann, Fanny Dahlquist, Peder Bergman et al. · Materials science forum · 2002 · 139 citations

Semiconductor Technology, Electrical Engineering, Engineering +6