Anne Henry

Deep levels created by low energy electron irradiation in 4H-SiC

L. Storasta, J. P. Bergman, Erik Janzén et al. · Journal of Applied Physics · 2004 · 279 citations

Semiconductors, Semiconductor Technology, Deep Levels +15

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Q. Wahab, A. Ellison, Anne Henry et al. · Applied Physics Letters · 2000 · 169 citations

Semiconductor Technology, Electrical Engineering, Epitaxial Growth +14

Photoluminescence studies of porous silicon carbide

Andrey O. Konstantinov, Anne Henry, Chris I. Harris et al. · Applied Physics Letters · 1995 · 140 citations

Materials Science, Materials Engineering, Electrical Engineering +11

High temperature chemical vapor deposition of SiC

Olof Kordina, C. Hallin, A. Ellison et al. · Applied Physics Letters · 1996 · 127 citations

Materials Engineering, Semiconductors, Materials Science +11

Growth of SiC by ?Hot-Wall? CVD and HTCVD

Olof Kordina, C. Hallin, Anne Henry et al. · physica status solidi (b) · 1997 · 127 citations

Engineering, Reactor Concept, Semiconductors +16